A Homogenization Technique for the Boltzmann Equation for Low Pressure Chemical Vapor Deposition

Thursday, June 8, 2000 - 11:00am - 12:00pm
Keller 3-180
Matthias Gobbert (University of Maryland Baltimore County)
Joint work with Christian Ringhofer.

Chemical vapor deposition is used in the manufacture of semiconductor chips to deposit thin layers of solid material on the surface of the silicon wafer. At very low pressures, the Boltzmann equation describes the flow of the reacting chemicals over the rough wafer surface. To make the domain amenable to numerical computations, a homogenization technique is used to obtain an equivalent model on a flat surface. Numerical test calculations support the analysis.