The increasing relevance of hot-carrier phenomena in MOSFETs makes it important to describe the injection of carriers at the silicon-silicon dioxide interface, the transport of carriers within gate oxides, and a number of related phenomena like trap formation. Such a description cannot be performed basing upon the customary drift-diffusion or hydrdynamic models, as the information about the high-energy tail of the distribution function is not available there. The talk presents the results of a self-consistent investigation of carrier transport in MOSFETs, including both the silicon and silicon-dioxide domains, carried out by means of the BTE solution obtained from the spherical-harmonics expansion. A number of results of "ab initio" calculation of the band structure of silicon dioxide will also be presented.
Work done in collaboration with: Susanna Reggiani, Elena Gnani.