Talk
Abstract:
Sobolev Norm and Carrier Transport in Semiconductors
Orazio
Muscato
Universita di Catania
Simulation of charge transport has become a strategically important
CAD tool for the semiconductor industry in the development of
new technologies.
Due to the increasing miniaturization of the device, Monte Carlo
simulations are necessary just on a small portion of the device
where strong non-equilibrium phenomena occur; the large part
of the the device is accurately described by macroscopic equations
(such as drift-diffusion, hydrodynamic models).
In order to determine the domain of validity of the kinetic-macroscopic
approaches, we need a criteria to determine whether the Monte
Carlo particle ensemble is near enough to a Maxwellian-like
distribution or not.
Sobolev Norms in Hs for s<-\frac32;
can be used to measure this distance: the norm is exactly computed
in the case s=-2. Numerical results for bulk silicon are shown.
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