IBM Research Division
Thomas J. Watson Research Center
P.O. Box 218 Yorktown Heigthts, NY 10598
In small silicon devices, conduction electrons in the channel are subject to long-range Coulomb interactions with electrons in the heavily-doped drain, source, and gate regions. We show that for devices with channel lengths shorter than about 40 nm and oxides thinner than 2.5 nm these interactions cause a reduction of the electron velocity. We present results obtained using both semiclassical two-dimensional self-consistent Monte Carlo-Poisson simulations and a quantum-mechanical model based on electron scattering from gate-oxide interface plasmons.
Work done in collaboration with Steve E. Laux.