Thin Film Growth Phenomena: Scaling from Angstroms to Meters
Joe Greene, UIUC
Abstract
Critical phenomena which determine nanoscale chemical reactions,
together with microstructural and surface morphological evolution, during
thin film growth, occur over vastly different distance and time scales.
Continuum modeling, necessary for describing the structure and chemistry,
and hence physical properties, of macroscopic thin film systems (typical
dimensions of nm to microns thick by mm to several hundred cm in diameter,
i.e. 1014 to 1022 atoms requires input from
kinetic equations which reliably
predict surface and bulk mesoscopic-scale reactions (diffusion, surface
roughening, island coalescence, grain growth, etc) that occur over times
ranging from 10-9 secs. to hour.
Understanding the basic physics governing these
collective reactions requires probing and modeling atomic-scale interactions
at surface and interfaces over times ranging from approximately
10-14
secs. to 10-6 secs. This, in turn, often necessitates ab initio
or quantum chemical
approaches. At all scales, experimental verification is essential.
In this talk, a few examples of microstructural and surface
morphological evolution during both epitaxial and polycrystalline film
growth will be briefly discussed to illustrate relationships (scaling laws)
between atomic-scale interactions and macroscopic (bulk) behavior.
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