We have created a two-postulate theory for field-effect transistors (FETs) that applies to metal-oxide-semiconductor FETs, junction FETs, metal-semiconductor FETs, and hetero-structure FETs. Although FETs are the most important electronic device fabricated in industry today, the mathematical model of FETs given in current texts is based on Shockley's forty year-old low drain voltage approximation. We will discuss the mathematics of our theory and compare its predictions with measurements.

1996-1997 Mathematics in High Performance Computing