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Talk abstract:
Modeling Issues
in Control of Microelectronics Fabrication Processes
A. Emami-Naeini, SC Solutions, Santa Clara, CA
Processes to produce microelectronics devices are becoming more complex
while global competition is demanding that these processes be brought to
market more quickly and more reliably. The design of controlled
microelectronics processing systems such as Rapid Thermal Processors
(RTP), High Pressure Vertical Furnaces (HPV), Vapor Deposition Chambers,
etc., involve a large design parameter space, and therefore
trial-and-error process optimization is difficult and time consuming.
With the imminent scaling to 300 mm diameter wafer size, the industry has
realized that empirical approaches are not cost effective. In addition,
the controller design of such systems is often separated from the
equipment design, possibly resulting in a system operating far from its
maximum capability. While detailed non-linear physical simulations,
integrated with optimization and control design algorithms, have the
potential to help explore the design space, the long turn-around time
required to answer every ``What if . . .'' question makes this approach
impractical at the present time.
Another difficulty is the inclusion of the feedback control for
closed-loop performance evaluations. The dynamic and/or sampled-data
requirements of the feedback control system are often very difficult to
incorporate into existing finite element and dynamic analysis software
packages. Furthermore, real-time robust feedback control design only
requires models that are accurate enough to meet the performance
tolerances, e.g., simplified or reduced-order models together with a
measure of the model error. What is missing at the present time are
mathematical methods that can operate on the detailed nonlinear physical
models of these advanced chambers to derive reduced-order models, together
with appropriate measures of model error. Ideally, such methods would be
analytic and not require extensive simulations. Lack of appropriate
sensors remains an impediment even though there is a major push toward
sensor development. Also, there is a lack of purely nonlinear controller
synthesis methods that are implementable.
Physical phenomena in microelectronics processing systems involve chemical
reactions, heat transfer, fluid mechanics, species transport, and plasma
physics. Integrated physical models are required to represent these
systems. Hence, progress in solving these complex engineering problems
requires an interdisciplinary approach involving close interaction between
systems and control theorists and their counterparts in applied
mathematics, physics, chemistry, and material science. Furthermore,
physical models must be validated within the context of a carefully
planned experimental program.
We will illustrate the above problems by describing our experience in
designing a temperature feedback controller for a Rapid Thermal Processing
(RTP) chamber, and the development of an integrated model for control of
an RF diode sputtering chamber for the growing of Giant Magneto-resistive
(GMR) thin-films.
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